Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions

Area-selective atomic layer deposition (AS-ALD) is a coveted method for the fabrication of next-generation nano-electronic devices, as it can complement lithography and improve alignment through scale control. Selective reactions small molecule inhibitors (SMIs) be used to deactivate growth on specific surface areas such enable AS-ALD. To investigate new applications ASD, we need insight into SMIs with broad range technology relevant materials. This paper investigates aminosilane oxide surfaces impact subsequent (ALD). We compare two SMIs, namely, dimethylamino-trimethylsilane (DMA-TMS) hexamethyldisilazane (HMDS), hydroxylated SiO 2 ALD processes. The DMA-TMS reaction saturates faster than HMDS forms dense trimethylsilyl (TMS) higher TMS concentration. concentration yields better inhibition selectivity during TiO ALD. show that wide surfaces, i.e., MgO, HfO , ZrO Al O 3 (TiN/TiO x ), SnO MoO WO remain reactive after exposure conditions where passivated, indicating AS-ALD these respect . On residual and/or C y H z species do not markedly inhibit but may affect interface purity. Surfaces lower, similar, acidity all less reactivity toward DMA-TMS, suggesting only factor affecting substrate-inhibitor interaction. Our study also compares hybrid inorganic-organic inorganic material in view their relevance resist extreme ultraviolet lithography. selective infiltration opposed tunable by bulk composition. These insights aid design area-selective processes, broaden space, applications.